Abstract
The surface morphology of BaF2 epitaxial films grown by MBE (molecular beam epitaxy) in various modes on the surface of CaF2/Si(100) is investigated by AFM. The CaF2 layers on Si(100) are obtained in the high-temperature growth mode (Т S = 750°C). It is shown that the epitaxy of BaF2 at a temperature of 600°C at the initial stage of growth leads to the formation of defects such as perforations in the epitaxial film, while epitaxy at a temperature of 750°C provides a defect-free film with a surface morphology suitable for the subsequent growth of semiconductors of IV–VI type and solid solutions based on them.
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Schedule a callMore From: Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
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