Abstract
The efficiency of micro-light-emitting diodes (μ-LEDs) depends enormously on the chip size, and this is connected to sidewall-trap-assisted nonradiative recombination. It is known that the internal quantum efficiency (IQE) of aluminum gallium indium phosphide (AlGaInP)-based red μ-LEDs is much lower than that of nitride-based μ-LEDs. To establish the major reasons giving rise to this huge IQE discrepancy, we examined the limiting factors in the two structures. For the nitride-based InGaN quantum wells, the influences of random alloy fluctuations were examined. A two-dimensional Poisson and drift-diffusion solver was applied to analyze these issues.
Highlights
A random number generator is used to generate random atom distributions, and the Gaussian averaging method is adopted for the local indium composition in the quantum wells (QWs) [28]
The second considers the factors that bring about the differences in internal quantum efficiency (IQE) between these two kinds of μ-lightemitting diodes (LEDs)
The IQE drops significantly for the AlInGaP-based red LEDs, and the efficiency is less than 10% for the
Summary
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