Abstract
AbstractInvestigation of the thermal etching (evaporation) of the source material in the process of silicon carbide crystal growth from the vapour phase by the sublimation method has been carried out. It has been established that silicon carbide etching in the temperature interval (2200–2600) °C takes place with the formation of whiskers of evaporation. The mechanism of their formation has been examined and the character of the whisker distribution in the charge of the source silicon carbide has been studied.
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