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Abstract
At present, submicron technologies, electrostatic discharges (ESD) are one of the major threats to the reliability of ICs. The aim of this paper is to demonstrate that a very good ESD protection level can be achieved provided we can insure a uniform triggering of multifinger NMOS protection devices. This can be done by a gate coupling to the drain, either by a capacitance or by a zener diode. Human body model (HBM) and charged device model (CDM) test results, as well as transmission line measurement (TLM) and light emission results support this finding.
Published Version
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