Abstract
A review of studies performed at the V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University and aimed at obtaining detailed information on the elementary growth processes proceeding at the crystallization front during vapor-phase epitaxy of semiconducting III–V compound films is presented in the paper. The general approach to the problem and methods of its solution are described. Results of investigations of the adsorption layer composition, surface diffusion processes, and incorporation of growth components into a crystal are presented. The mechanism of epitaxial layer growth in semiconducting III–V compounds is discussed.
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