Study of the electrical characteristics of the permeable base transistor high frequency response

Abstract

The establishment of the equivalent circuit of the Permeable Base Transistor (PBT) is here presented. The equivalent circuit is deduced from the numerical simulation of its electrical characteristics, at slow varying regime. We begin from a natural equivalent circuit of the transistor, limited in its active area and then we extend it in order to take into account the actual elements of the device. Finally we present the evolution of the transition frequency and of the maximum oscillation frequency. We show that the PBT does not have intrinsically high frequency performances better than those of classical devices.