Abstract
In this research, the preparation of pure ( CdO ) films on a glass substrate were conducted using a pulsed laser deposition method (PLD) . The deposition of the films was done at different times ( 5 , 10 , 15, 20 ) minutes at room temperature. The effect of non-thermal plasma on these prepared films in two exposure times of (30, 60) minutes was studied. The results of X-ray diffraction (XRD) of the prepared pure ( CdO) films showed that the films have a polycrystalline structure of cubic phase with preferred orientation (111). It was noted that the increase of deposition time of (Nd : YAG) laser, reduces the intensity of diffraction peaks at (111 ) , (200) , (220) . The results of (XRD) have also shown that when the prepared pure ( CdO ) films are exposed to the non-thermal plasma, their crystalline structure was not affected. The tests also showed that the increase of the exposure time to non-thermal plasma causes a decrease in the intensity of the diffraction peaks. The (AFM) tests also demonstrated that the changing in ( RMS ) of the surface roughness is irregular and it was found that the ( RMS ) increases by increasing the deposition time.
Highlights
Cadmium oxide thin film is considered as a semiconductor of ( n-type ), it is found in nature in two structural forms, the first one is the crystalline form and the second is the amorphous form, the crystalline form is of reddish brown colour, while the amorphous form has no colour [1]
The results of (XRD) showed that the exposure of the prepared films, using (PLD) method, to non-thermal plasma caused the increase of the films' growth, and that is clear when the exposure time to nonthermal plasma increases (60 min), especially at deposition time (20 min)
Is not constant, as shown in the table (3), it is possible that the increase of exposure time to non-thermal plasma will make the change of the (RMS) be constant to some extent, and it was observed the increase of the (RMS) by the increase of deposition time so it is possible that the increase of plasma exposing time caused the increase of the growth of crystalline grains, as shown in the figures, especially the (3D)
Summary
Cadmium oxide thin film is considered as a semiconductor of ( n-type ) , it is found in nature in two structural forms , the first one is the crystalline form and the second is the amorphous form , the crystalline form is of reddish brown colour , while the amorphous form has no colour [1]. The crystalline structure of pure cadmium oxide is face centered cubic (fcc) [2]. In this research we prepared thin films of CdO by PLD with different deposition time and studied the effect of time exposure of non-thermal plasma on these films. The non-thermal plasma is the type of plasma that is used in most of the scientific researches It is classified into two kinds : equilibrium plasma and nonequilibrium plasma [5] .It has been widely used in industry especially in preparing and depositing thin films [6]. Figure 1: the crystalline structure of (CdO) [7]
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