Abstract
We have studied the effect of grain boundary migration on hillock formation in unpassivated Al thin films during thermal cycling. Hillocking occurs more frequently in Al films that experience grain growth during thermal cycling than in films with stabilized grain structures. The hillocking frequency is at least four times greater in the films that experience grain growth, as judged by the number of hillocks observed per initial grain boundary triple junction. This latter measure takes account of the smaller initial grain size in the film that experiences grain growth and shows that grain boundary migration itself must enhance the hillocking frequency.
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