Abstract
AbstractThe early stages of the Cr/4H‐SiC(11‐20) interface formation at room temperature and the influence of annealing up to 1170 K in ultra‐high‐vacuum were investigated using XPS and Work Function (WF) measurements. The ultrathin polycrystalline Cr film growth onto the SiC surface was via 3D‐cluster formation after the first 1‐2 monolayers. The height of the Schottky barrier (SBH) at the Cr/4H‐SiC (11‐20) interface was found by XPS to be 1.2±0.1 eV at room temperature. Annealing up to 920 K did not cause any significant changes in the film, except for some enrichment in oxygen, whereas the SBH exhibited a gradual increase by 0.3±0.1 eV. Farther annealing up to 1170 K led to drastic Cr coalescence and/or partial removal from the surface region, leaving on the exposed SiC substrate surface excess oxygen in the form of SiOx species and traces of interfacial silicide formation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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