Abstract

Oblique X-ray diffraction images of individual dislocations in the symmetric Laue geometry from a plane-parallel silicon plate have been calculated based on the Takagi-Taupin equations and analyzed. Computer simulation is used to develop a general mathematical model of the formation of oblique images which correspond to sample rotation around the diffraction vector h in X-ray topo-tomography. The results of numerical calculations and analysis of different oblique images of straight-line dislocations, where the dislocation line vector τ lies in a plane parallel to input surface of {111}Si plate with a diffraction vector h 〈220〉, are presented.

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