Abstract
The degradation in lateral double-diffused MOS (LDMOS) is increased obviously with the higher operation drain voltage and the shrink of technology node. Therefore, it is important to study the damage of degradation, which is caused by the long- term hot carrier stress (HCS). Recently, the TCAD tools have already used the degradation model with some additional parameters in device electronic simulation. In this paper, we will determine the location of impact ionization and discuss the mechanism of degradation in LDMOS with STI technology. According to different gate voltage and drain voltage stress conditions, the key degradation region influenced the reliability of devices is deduced. This paper also discusses several methods to improve the degradation of the device. These methods are useful to improve the degradation of the device, which are proved by TCAD simulation results.
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