Abstract
In the present work the gas dynamics in the growth zone of SiC crystals is investigated. It is shown that the propagation of SiC vapour from the growth cavity walls towards the lids is effected by diffusion. On this basis the calculation of the concentration distribution of SiC vapour (n), the equilibrium vapour concentration (ns) and the supersaturation ( alpha =((n-ns)/ns)*100%) in the crystal growth zone at different radial and axial temperature gradients is carried out by solving the Laplace equation in cylindrical coordinates for a stationary case corresponding to the conditions of crystal growth. The results obtained are compared with the available experimental data; this makes it possible to explain some of the peculiarities observed during SiC crystal growth from the vapour phase by the sublimation method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
