Abstract
Polarized neutron reflectometry was used to investigate the amorphous multilayer nanostructures [(Co45Fe45Zr10)x(Al2O3)100−x/a-Si:H]m, whose magnetic properties are dependent on the concentration of the magnetic constituent (x=34, 47 and 60at%) as well as on the thicknesses of the metal-dielectric (Co45Fe45Zr10)x(Al2O3)100−x and semiconductor a-Si:H layers. The average magnetization of the individual magnetic layer is found to be inhomogeneous with the magnetically active central part and two magnetically dead parts at the interfaces.
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