Abstract
AbstractThe investigation by the Monte‐Carlo method of the growth of the silicon epitaxial film at a chloride CVD system has allowed to find out the composition of adsorption layer, the micromechanism of the reactions of Si atoms building‐in into the growing crystalline layer and the growth conditions influence on the growth rate and film surface roughness. The change of adsorptive layer composition in the system SiCl4—HCl—H2 (fraction of adaatoms, silicon atoms built‐in a crystal and molecules SiCl2) depending on temperature has been determined. The change of silicon film growth rate depending on temperature and concentration change of SiH2Cl2 has been established and the contribution of growth mechanism (with participation of adatom, silicon atoms and molecules SiCl2) into the total rate of film growth has been shown.
Published Version
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