Abstract
AlN films doped with Si (AlN:Si) were synthesized on p-Si(100) substrates by pulsed laser deposition. Al-AlN:Si-Si metal-insulator-silicon (MIS) structures were formed and their current-voltage characteristics measured at 77 K and 290 K were analyzed. The results revealed that the charge transport is carried through the AlN:Si-Si MIS structures by the mechanism of trap space charge limited current.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
