Abstract
The MESA process for building silicon diodes is described. I– V and C– V features of MESA detectors are given. Results of pulse-height spectra measurements with α particles incident on the front and back sides of a MESA diode establish the energy resolution of these detectors, show the evolution of their response as a function of applied bias voltage, and bring information about the influence of MESA structure on charge collection. The characteristics of MESA detectors as a function of fluence are investigated in view of their possible use in high particle fluence environment. Charge collection data obtained from the measurements of the current-pulse response induced by β and α particles are presented as a function of applied bias voltage and particle fluence. Some electrical characteristics of detector material, namely the effective impurity or dopant concentrations ( N eff), the electron ( μ e) and hole ( μ h) mobilities, are studied as a function of fluence using a charge transport model. A comparison is made with the features of standard planar (SP) silicon detectors.
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