Abstract
Ferroelectric SrxBa1−xNb2O6 (SBN) thin films are deposited on Al/Si (100) substrates by radio frequency magnetron sputtering at room temperature. The nanograin sizes of the SBN thin films were analized by scanning electron microscopy (SEM). X-ray diffraction reveals that all the SBN thin films show an amorphous structure because they were deposited at room temperature.The capacitive properties of the SBN thin films were measured using metal ferroelectric insulation semiconductor (MFIS) structures. The memory window of the MFIS structure was characterized with a capacitance-voltage (C-V) method.
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