Abstract
In this contribution, we report on investigations of THz emission from Cu(In,Ga)Se2 layers, deposited from a single copper-de cient sputtering target. Emission from Cu(In,Ga)Se2 layer surface and from multilayer structure with transparent ZnO layers were studied. It was determined that additional undoped ZnO layer reduces the amplitude of THz emission, while additional n-type ZnO layers increase the emission amplitude again. This e ect can be attributed to stronger electric eld in the heterostructure between p-type Cu(In,Ga)Se2 and n-type ZnO layers.
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