Study of temperature dependent structural changes in molecular-beam epitaxy grown Hg1−xCdxTe by x-ray lattice parameter measurements and extended x-ray absorption fine structure

Abstract

Infrared detectors fabricated from Hg1−xCdxTe typically operated in the 60 to 160 K range. The temperature dependence of the atomic structure of HgCdTe may influence device performance. We present the first detailed study of the x‐ray diffraction lattice parameters of molecular‐beam epitaxy grown Hg1−xCdxTe epilayers between 15 and 300 K. The epilayers were grown on (100) oriented CdTe substrates, and varied in thickness (6 to 11 μm) and composition (x=0–0.172). The (400) reflection was measured to determine the lattice parameter α⊥ normal to the film. HgTe(x=0) exhibited normal lattice contraction (α=4.7×10−6±0.3 K−1 at 300 K), with a minimum in α⊥ at 60 K, and an expansion of α⊥ below 60 K. In addition to showing a minimum in α⊥ at 60 K, some of the Hg1−xCdxTe (x≠0) epilayers (10 μm thick) exhibited anomalous behavior with varying degrees of thermal hysteresis in α⊥. The average contraction of α⊥ for these epilayers from 300 to 60 K is 0.006 Å. This is compared with results we have obtained from a temperature dependent extended x‐ray absorption fine structure study of these HgCdTe epilayers: whereas HgTe exhibited a normal thermal contraction of the Hg‐Te bond length consistent with the lattice parameter results, in the HgCdTe epilayers this bond contracts 0.02 to 0.03 Å on cooling from 300 to 10 K. We also present lattice parameter measurements for a thin cap layer of CdTe on HgCdTe. An increase of 0.0134 Å in α⊥ relative to the bulk was observed for a 1000 Å layer of CdTe on HgCdTe at 300 K.