Abstract
The growth conditions for producing high quality InGaAsP(λ=1.3 μm)/In 0.53Ga 0.47As interfaces on (100) oriented InP by liquid phase epitaxy were investigated in detail. Results on the variation of InGaAsP layer thickness, lattice mismatch and photoluminescene wavelength with growth temperature reveal that homogeneous nucleation of the quaternary growth melt occurs at a critical supercooling δ T c. Four growth regimes, δ T > δ T c and δ T < δ T c in both the presence and absence of apparatus vibration were evaluated. High quality InGaAsP/InGaAs interfaces can be grown at melt cooling rates as low as 0°C/min for δ T < δ T c in the absence of vibration, but vibration will slightly degrade interface quality. For δ T > δ T c, melt cooling rates of ≈0.6°C/min i the absence of apparatus vibration will yield good interfaces; but melt cooling rates ≤ 0.1°C/min and/or apparatus vibration will result in very poor quality interfaces. Attack of InGaAsP (λ=1.55 μm) epilayers by quaternary melts with δ T > δ T c and low melt cooling rates was also observed.
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