Abstract
We have grown single crystalline GaMnN films by a horizontal hydride vapor-phase epitaxy (HVPE) system. The structures and crystal quality were confirmed by XRD and Raman scattering measurements. The structure analysis indicated that we obtained uniform GaMnN solid-solution films; the Mn atoms were substituted for Ga sites and did not form Mn precipitates or clusters. The superconductor quantum interference device (SQUID) results show that the GaMnN films without the phase separation exhibit paramagnetic properties.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
