Study of structural, Morphological and Electrical Properties of CdxZn1-xS Thin Films

Abstract

The CdxZn1-xS (x=00, 0.2, 0.4, 0.6, 0.8, and 1.0) were prepared by using Chemical Bath Deposition (CBD) Technique. The prepared CdxZn1-xS thin films were characterized by X-ray diffractometer (XRD) and Scanning Electron Microscopy (SEM). The structural and morphological properties have been investigated. XRD pattern exhibits the hexagonal crystal structure of CdxZn1-xS. The dark electrical resistivity measurement was carried out in the temperature range 298 to 383 K by using two point probe method. The dark resistivity measurement shows that the prepared CdxZn1-xS thin films have high resistivity. The dark resistivity at room temperature was found to be of the order of ≥10 Ω cm for pure CdS and ≥10 Ω cm for CdxZn1-xS thin films. The dark resistivity was observed increased with Zn content.