Abstract
In this work, the crystal structure and optical properties of CdTe thin films were investigated depending on the technological conditions of their deposition. In addition to structural measurements, the exciton was also used as a probe for the defect structure and optical quality of these films. The films growth mechanism was determined. Microstructural characteristics of CdTe:Yb thin films were obtained. It is shown that the photoionization energy of complex acceptor centers including noble metal ions and Yb3+ ions is about 100 meV. The accurate values of the band gap for CdTe:Yb thin films were obtained based on exciton spectra. A correlation was established between the microstructural parameters of the films and the behavior of their exciton spectra. These results make it possible to significantly improve the structural and optical properties of CdTe thin films in order to obtain a material with controlled electronic characteristics, suitable for modern optoelectronic applications.
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