Abstract
Phosphorus-doped ZnO thin films were fabricated by pulsed laser deposition (PLD) with different phosphorus pentoxide (P2O5) concentrations. The as-deposited films were annealed in nitrogen gas at 800 °C for 5 min. Hall effect measurement showed that all the as-deposited films were n-type semiconductors, and confirmed that after annealing treatment, a particular sample could be transformed from an n-type semiconductor into a p-type one. On the basis of the results of X-ray diffraction analysis and X-ray photoelectron spectroscopy, the mechanism of such transformation was discussed.
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