Abstract
Lattice distortions in LEC-grown semi-insulating GaAs bulk crystals are studied mainly by synchroton X-ray topography. Besides the microscopic lattice orientation and lattice parameter variations relating to the dislocation generation by thermal stress after growth, microscopic variation of the lattice parameter in a single cell is observed, which may be intrinsic due to some interaction of excess arsenic atoms with the entangled dislocations forming the cell walls.
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