Study of stacked-emitter layer for high efficiency amorphous/crystalline silicon heterojunction solar cells

Abstract

A modified emitter, of stacked two layer structure, was investigated for high-efficiency amorphous/crystalline silicon heterojunction (HJ) solar cells. Surface area of the cells was 181.5 cm2. The emitter was designed to achieve a high open circuit voltage (Voc) and fill factor (FF). When doping of the emitter layer was increased, it was observed that the silicon dihydride related structural defects within the films increased, and the Voc of the HJ cell decreased. On the other hand, while the doping concentration of the emitter was reduced the FF of the cell reduced. Therefore, a combination of a high conductivity and low defects of a single emitter layer appears difficult to obtain, yet becomes necessary to improve the cell performance. So, we investigated a stacked-emitter with low-doped/high-doped double layer structure. A low-doped emitter with reduced defect density was deposited over the intrinsic hydrogenated amorphous silicon passivation layer, while the high-doped emitter with high conductivity was deposited over the low-doped emitter. The effects of doping and defect density of the emitter, on the device performance, were elucidated by using computer simulation and an optimized device structure was formulated. The simulation was performed with the help of Automat for the Simulation of Heterostructures simulation software. Finally, based on the simulation results, amorphous/crystalline heterojunction silicon solar cells were optimized by reducing density of defect states in the stacked-emitter structure and we obtained 725 mV, 77.41%, and 19.0% as the open-circuit voltage, fill factor, and photo-voltaic conversion efficiency of the device, respectively.