Abstract
In this work, a methodology to analyze the stability of solution-processed transparent dielectric based on Spin-on Glass under electrical stress is presented. Electrical stress is applied to MOS capacitors at different voltage values. The capacitance – voltage curves are analyzed as a function of stress time and voltage applied. After a rest period of 24 and 48 h, the capacitance – voltage curves were measured to compare performance. The results are applicable to Thin-film Transistors in order to study their stability and avoid confusion with the defect creation in channel layer mechanism.
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