Abstract
Some properties of excitons in polar semiconductors are studied theoretically by means of squeezed state variational approach. This method makes it possible to consider bilinear terms of the phonon operators as well as linear terms arising from the Lee–Low–Pines (LLP)-like transformation. The exciton ground state energy and binding energy are calculated numerically. It is shown that the squeezing effect is significant in the case of strong exciton-phonon coupling region.
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