Abstract
The spin mixing conductance g↑↓ of a ferromagnetic and a nonmagnetic (NM) layer characterizes the transport efficiency of spin current through the interface. Exploration of the relationship between g↑↓ and structural parameters such as the lattice orientation of the NM layer is critical to design effective spintronics devices. Here, the spin mixing conductance of two types of single oriented Pt and Ni81Fe19 (Py) was studied experimentally, with the method of spin pumping. The obtained g↑↓ for Pt (100)/Py and Pt (111)/Py bilayers is 8.6 ± 0.9 nm−2 and 10.8 ± 1.6 nm−2, respectively, revealing the fact that the crystalline orientation of the metallic NM layer has no prominent impact on g↑↓, which is consistent with the theoretical prediction.
Highlights
In the spin pumping process, a spin current is injected into an NM layer from an FM layer by exciting magnetization dynamics via, e.g., ferromagnetic resonance (FMR)
The spin Hall angle θSH9,12,14–18 and the spin-pumping induced inverse spin Hall voltage6,9,13,16,18–22 have been explored in different structures, showing that the influence of structural parameters of the interface on spin pumping cannot be neglected
Another parameter that plays a crucial role during the spin pumping process is the spin mixing conductance g↑↓, which characterizes the transport of spin current through the FM/NM interface
Summary
The generation and injection of pure spin currents without accompanying charge currents in solid-state systems become increasingly important. Bilayers, composed of a ferromagnetic (FM) and a nonmagnetic (NM) layer with large spin–orbit interaction, are promising systems to acquire pure and tunable spin current by the method of spin pumping. In the spin pumping process, a spin current is injected into an NM layer from an FM layer by exciting magnetization dynamics via, e.g., ferromagnetic resonance (FMR). In recent years, many efforts have been made to investigate spin pumping properties in FM/NM layers with both metallic and nonmetallic FM layers. For example, the spin Hall angle θSH (which measures the efficiency of the spin-to-charge current conversion) and the spin-pumping induced inverse spin Hall voltage (which measures the spin current transformed charge current by spin-dependent deflection) have been explored in different structures, showing that the influence of structural parameters of the interface on spin pumping cannot be neglected.. The spin Hall angle θSH (which measures the efficiency of the spin-to-charge current conversion) and the spin-pumping induced inverse spin Hall voltage (which measures the spin current transformed charge current by spin-dependent deflection) have been explored in different structures, showing that the influence of structural parameters of the interface on spin pumping cannot be neglected.. The spin Hall angle θSH (which measures the efficiency of the spin-to-charge current conversion) and the spin-pumping induced inverse spin Hall voltage (which measures the spin current transformed charge current by spin-dependent deflection) have been explored in different structures, showing that the influence of structural parameters of the interface on spin pumping cannot be neglected.4,7,9,10,22–24 Another parameter that plays a crucial role during the spin pumping process is the spin mixing conductance g↑↓, which characterizes the transport of spin current through the FM/NM interface.. The resultant g↑↓ for the Pt (100)/Py and Pt (111)/Py films in this study is 8.6 ± 0.9 nm−2 and 10.8 ± 1.6 nm−2, respectively, indicating that the crystalline orientation of the metallic NM layer has no prominent impact on g↑↓, in accordance with the prediction by first-principles calculations. The detailed study of g↑↓ using a single oriented NM layer provides a new prospective to understand the spin pumping efficiency and advance the practical application of spin current
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