Abstract
Abstract In the present work ternary composite InBiS3-In2S3-Bi2S3 (IBS) thin films are developed using a homogeneous mixture of precursors [Bi(S2CN(C2H5)2)3]2 (1) and [In(S2CNCy2)3]‧2py (2), separately in toluene and chloroform solutions at 500°C under an inert atmosphere of argon gas via aerosol assisted chemical vapor deposition (AACVD) technique. The phase purity, chemical composition and morphological study of both the films deposited from toluene and chloroform solutions are characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and Field emission scanning electron microscopy (FESEM). The surface morphology showed rod like structure of the films developed from toluene while the films grown from chloroform solution give flake like shapes. The UV-visible spectroscopy explicated that the thin films developed from toluene and chloroform solutions show wide range absorption in whole visible region. Linear Scan voltammetry results show that both the films give negligible dark current, however, the films fabricated from toluene solution give a sharp steep curve with maximum photocurrent density of 2.3 mA‧cm-2 at 0.75 V vs Ag/AgCl/3M KCl using 0.05 M sodium sulphide solution under AM 1.5 G illumination (100 mW‧cm-2), while the film grown from chloroform generates a photocurrent density of 2.1 mA‧cm-2 under similar conditions. The LSV outcomes are further supported by electrochemical impedance spectroscopy (EIS) that gives charge transfer resistance (Rct) value of 8,571 Ω for the films developed from toluene as compared to films fabricated from chloroform with Rct value of 12,476 Ω.
Highlights
The IBS composite films are developed for 40 min from equimolar homogenous solutions of precursors (1) and (2) in toluene and chloroform solvents in separate experiments on fluorine doped tin oxide (FTO) substrate at 500°C via aerosol assisted chemical vapour deposition (AACVD)
The IBS composite thin films are successfully fabricated on FTO substrate at 500°C from dual source precursors [Bi(S2CN(C2H5)2)3]2 (1) and [In(S2CNCy2)3]‧2py (2), having similar thermal properties using two different solvents i.e. toluene and chloroform by aerosol assisted chemical vapor deposition technique and used as photoelectrode
The comparative study of the thin films deposited in two different solvents show well connected nanowires developed from toluene solution and possess a band gap of 1.82 eV and provide improved photocurrent density of 2.3 mA‧cm-2 at applied potential of 0.75 V as compared to flake shaped thin films developed from chloroform
Summary
University, Multan 60800, Pakistan; Departmenwt hofeCnhemveisrtrAy,∗ acts onretnheewbaabsleis e{nvei}rgdi=y Low band gap values i.e. 1.2-1.7 eV, high absorbance co-efficient, environmental harmony and ease of conversion of solar light energy to electrical energy (~5%) make bismuth sulphide a promising material for photoelectrical applications in comparison to other chalcogenide semiconductors (Dunst et al, 2016; Liufu et al, 2007). Indium based chalcogenides are attractive solid materials due to their extensive use especially in photovoltaics, optoelectronic and many technological applications (Bhira et al, 2000; Sankir et al, 2015; Yadav and Salunke, 2015) This is possibly due to their compact structure, flexibility in band gap values and photoconductive nature (Bhira et al, 2000). We report first time, the deposition of InBiS3-In2S3-Bi2S3 (IBS) composite thin films on FTO substrate at 500°C from mixture of precursors [Bi(S2CN(C2H5)2)3]2 (1) and [In(S2CNCy2)3]‧2py (2) using two different solvents, toluene and chloroform via AACVD
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