Abstract
Silicon-doped GaAs crystals with free carrier concentrations between 2×10 17 and 3×10 18 cm −3 were grown successfully with and without B 2O 3-coating using the Vertical Gradient Freeze method. Growth experiments with full encapsulation (FE-VGF) of the GaAs resulted in etch pit densities lower than 200 cm −2 with an X-shaped configuration in all investigated crystal wafers. The application of B 2O 3 causes a reduction in dislocation density and a decrease in carrier concentration combined with the incorporation of boron. Local vibrational mode (LVM) spectroscopy was used to study the incorporation of silicon and boron in different as-grown samples compensated by electron irradiation. In addition to the LVM lines of Si related defects, the modes of B Ga, B As and Si Ga–B As were observed in crystals grown with full encapsulation. The incorporation of B in equal quantities besides Si dopant seems to be responsible for the dislocation reduction.
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