Abstract
We investigate micro‐roughness of silicon surface in remote radiofrequency (RF) SF6 plasma, for different etching durations. A linear behavior of etching rate is observed as a function of etching time. PL measurements at different temperatures indicate a visible (green and violet) and ultraviolet (UV) emissions. The evolution of surface roughness of Si substrates can be controlled depending on the etching duration. In response to the increase of the etching duration, the surface undergoes nanoscale roughening, ripple formation, and finally microscale roughening. Atomic force microscopy analysis was carried out to surface morphology.
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