Study of silicon photomultiplier performance in external electric fields

Xiangming Sun ,D Fudenberg,O Njoya,A K Soma ,A Robinson,F Retière,F Vachon,K Odgers,Delong Qiu ,J.‐F Pratte ,J Echevers,A Karelin,N Roy,L Yang,B Mong,I Badhrees,S Li,A Jamil,W M Fairbank ,M J Dolinski ,A House,Z Ning,Yi-Hsuan Lin ,O Zeldovich,T Tsang,W Cree,Е Raguzin ,D A Harris ,Yuta Ito ,Samuel Parent ,G Giacomini,P S Barbeau ,M Tarka,R Maclellan,D S Leonard ,I J Arnquist ,M Chiu,M J Jewell ,B Veenstra,U Wichoski,S Sangiorgio,D Fairbank,A Pocar,J Zhao,D Beck,Amal Alamre ,Y Lan,W R Cen ,T Rossignol,T Daniels,Wen-Zhou Wu ,F Bourque,Y Zhou,G Gallina,Ying Ding ,C Licciardi,M K Moe ,J Brodsky ,Guangtao Cao ,Serge A Charlebois ,Judith Schneider ,K Skarpaas ,L Wen ,R Krücken,J Dilling,W Wei,M Heffner,V Veeraraghavan,M Hughes,J Daughhetee,Y.-R Yen,A Kuchenkov,S Kravitz,A C Larson ,M Wagenpfeil,T Tolba,J Todd,J Farine,C E Jessiman ,E W Hoppe,J Newby ,V Stekhanov,A Craycraft,A Iverson,G Li,A Dragone,David C Moore ,S Rescia,G Gratta,R Devoe,A Piepke,R Tsang,M Oriunno,I Ostrovskiy,L J Kaufman ,S Delaquis,K Murray,D Sinclair,Krishna Kumar ,S J Daugherty ,T Ziegler,M Weber,Thilo Michel ,Minor J Coon ,E V Hansen ,M Côté,J Albert ,Liqiang Cao ,Pin Lv ,Susann Schmidt ,Q Wang,P C Rowson ,C.T Overman,A Der Mesrobian-Kabakian,B T Cleveland ,G Visser,S Feyzbakhsh,L Fabris,T Koffas,T Brunner,Qi Xia ,J L Vuilleumier ,J Hößl,G Anton,F Nolet,R Saldanha,T Stiegler,L Darroch,R Gornea,Trilochan Bhatta ,O Nusair,P Hufschmidt,V Radeka,T Rao,T I Totev ,Z Li,P Fierlinger,E Brown,Sen Wu ,A Odian,J L Orrell ,J Dalmasson,R Fontaine,Gerrit Wrede ,G St-Hilaire,G S Ortega,X S Jiang ,J Watkins,Claire Chambers ,V Belov,A Burenkov,D Kodroff

doi:10.1088/1748-0221/13/09/t09006

Abstract

We report on the performance of silicon photomultiplier (SiPM) light sensors operating in electric field strength up to 30 kV/cm and at a temperature of 149 K, relative to their performance in the absence of an external electric field. The SiPM devices used in this study show stable gain, photon detection efficiency, and rates of correlated pulses, when exposed to external fields, within the estimated uncertainties. No visible damage to the surface of the devices was caused by the exposure.

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