Study of silicon–organic interfaces by admittance spectroscopy

Abstract

An admittance spectroscopy technique has been developed for the interfaces between organic monolayers and silicon. The present work involves the development of an effective equivalent circuit to represent the silicon/organic-monolayer system, and the development of a parameter extraction procedure, which yields the monolayer capacitance and the monolayer thickness, the flat-band voltage, the silicon doping density, the silicon surface potential, the interface trap density, the interface trap capture cross-section and the interface trap energy. This technique was applied to three types of silicon/organic-monolayer system.