Study of silicon-on-insulator substrates incorporated with buried MoSi 2 layer

Abstract

Silicon-on-Insulator (SOI) substrates incorporated with buried MoSi 2 were fabricated using room temperature plasma bonding technology and smart cut technology. The molybdenum disilicide phase formation and morphology were studied by means of four-point probe measurements, X-ray diffraction analysis, atomic force microscopy and transmission electron microscopy examination. It is found that the transition of high-resistance phase Mo 3Si to low-resistance phase h-MoSi 2 occurs at approximately 750 °C. The t-MoSi 2 phase emerges at approximately 900 °C. SOI substrate incorporated with buried silicide layer of complete t-MoSi 2 phase can be achieved by 900 °C annealing for 20 min.