Abstract
We present results of the study on the silicon nanoparticles formation in multilayer silicon nitride structures. These structures consist of pairs of stoichiometric silicon nitride dielectric layers (SiNx) and silicon rich nitride layers (SRN). Silicon nanocrystals precipitate from the SRN layer during annealing at high temperatures (1000 °C or 1100 °C). High resolution transmission electron microscopy has been applied for investigation of the nanocrystals formation. Surface photovoltage spectroscopy technique was used for the spectral characterization of prepared structures
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