Study of SiC and Si 3N 4 inclusions in industrial multicrystalline silicon ingots grown by directional solidification method

Abstract

In directional solidification of multicrystalline silicon ingots for solar cells, the concentration of C and N impurities in the silicon melts increases with progression of solidification due to their relatively low segregation coefficients. In the case of supersaturation of C and N in silicon melts, SiC and Si 3N 4 inclusions are formed. In this work, a piece of multicrystalline silicon was selected from a central block, which was cut out from an industrial multicrystalline silicon ingot grown by directional solidification method. The distribution of SiC and Si 3N 4 inclusions from the top to bottom regions was systematically studied. It was found that majority of SiC and Si 3N 4 inclusions are present in the top region and the amount of inclusions decreases exponentially from the top surface down to the bulk of the ingot. Morphologies and characteristics of the SiC and Si 3N 4 inclusions were investigated. The presence of SiC and Si 3N 4 inclusions generates high density of dislocations in multicrystalline silicon, and sometimes can also introduce pores into multicrystalline silicon. The results of this work will be of practical interest to the photovoltaic industry.