Abstract
Recent approaches to address more efficient method on storing hydrogen by using adsorbent materials has been done. The hydrogen adsorption on silicon has been studied through molecular dynamics simulations and experiment by researchers. We conducted molecular dynamics simulation using a Lennard-Jones potential to demonstrate the hydrogen adsorption capability of silicon surface (001) and (111) with various temperature applied. The amount of hydrogen adsorbed by silicon surfaces are higher as entropy of the system decreases. Without considering entropy, Si (111) has higher adsorption capability due to its lower energy surface than Si (001).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IOP Conference Series: Materials Science and Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
