Abstract
In this paper, a process of controlling the size of silicon (Si) quantum dots in SiO2 layers by Si+ implantation and rapid thermal annealing (RTA) is proposed. Through the proposed process, nanoscale Si islands in the range of 2–5 nm have been generated and then analyzed by various techniques including photoluminescence (PL) analysis, atomic force microscopy (AFM), and transmission electron microscopy (TEM). The characterization results are consistent with the results of theoretical computation based on the quantum confinement model by the finite-element method (FEM). The proposed process and results will be helpful in developing single-electron devices.
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