Abstract
In this paper, a process of controlling the size of silicon (Si) quantum dots in SiO2 layers by Si+ implantation and rapid thermal annealing (RTA) is proposed. Through the proposed process, nanoscale Si islands in the range of 2–5 nm have been generated and then analyzed by various techniques including photoluminescence (PL) analysis, atomic force microscopy (AFM), and transmission electron microscopy (TEM). The characterization results are consistent with the results of theoretical computation based on the quantum confinement model by the finite-element method (FEM). The proposed process and results will be helpful in developing single-electron devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
