Abstract
Achieving large on-state current at low power supply voltage is one great challenge for tunneling transistors (TFETs). In this paper, an N-type Green transistor (gFET) with an ultra-shallow pocket junction has been fabricated. The main feature of the device is that the pocket junction was formed by germanium (Ge) preamorphization implantation (PAI) plus arsenic (As) ultra-low energy implantation combined with spike annealing. The Ge PAI can form a Si1-xGex/Si heterojunction in the N+ pocket region. Combined with a heavily doped N+ pocket, it can realize an abrupt tunnel junction between N+ pocket and P+ source, which is helpful to increase the tunneling probability and get higher on-state current. The fabricated gFET exhibits good electrical characteristics. The device’s on-state current is up to 215µA/µm (@VDS=VGS=2V).
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