Abstract
Silicon-based monolithic laser has long been desired. Recent demonstration of lasing from direct bandgap group-IV alloy GeSn has opened a completely new venue from the traditional approach of III-V integration on Si. In this paper, high-quality GeSn samples were grown using a multiple-step Sn-enhanced growth recipe with a Sn composition as high as ~20.0%. The GeSn lasers based on waveguide Fabry-Perot and micro-disk cavities have been fabricated and characterized. The ridge waveguide features better local heat dissipation while the micro-disk offers stronger optical confinement as well as strain relaxation. The maximum operating temperature of 260 K from a waveguide laser and a threshold of 108 kW/cm2 at 15 K from a micro-disk laser were achieved. The peak lasing wavelength was obtained up to 3.5 µm with a 100-µm-wide ridge waveguide laser.
Highlights
Silicon, Germanium, and their alloys have been the most significant materials for the electronics industry that have driven the digital revolution
The maximum operating temperature of 260 K was achieved with a waveguide laser, and a threshold of 108 kW/cm2 at 15 K was obtained with a micro-disk laser
By optimizing the cavity geometry, further enhanced optical confinement and local heat dissipation can be achieved for FP and micro-disk cavities, respectively, and the device performance can be significantly improved
Summary
Germanium, and their alloys have been the most significant materials for the electronics industry that have driven the digital revolution. (i) The material quality of sample A is higher than that of sample B, so that with the same laser structure, for the ridge waveguides (FP cavity), the maximum operating temperature of device A1 (260 K) is higher than that of device B1 (150 K); B1 has less efficient heat dissipation due to its narrow ridge width; for the micro-disks (MD), the maximum operating temperature of device A2 (250 K) is higher than that of device B2 (230 K), and, at 15 K, the threshold of A2 is lower than that of B2. (iii) Since the wider ridge waveguide structure features better local heat dissipation while the micro-disk structure offers improved optical confinement, they both achieve relatively high operating temperatures (260 and 250 K for samples A1 and A2). For device B2, the shorter pumping pulse duration (0.6 ns) reduces the local heating effect, resulting in its operating temperature being 80 K higher than that of device B1
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