Abstract
Long-term memory (LTM ) and short-term memory (STM ) and their evolution from one to the other are important mechanisms to understand brain memory. We use the Hodgkin–Huxley (HH ) model, a well-tested and closest model to biological neurons and synapses, to shine some light on LTM and STM memorization mechanisms. The role of [Formula: see text] and [Formula: see text] ion channels playing in LTM and STM process is carefully examined by using three different types of input signals, namely, a step DC voltage, a positive part of sinusoidal wave and periodic square signal with read voltage. Results are analyzed based on first-order [Formula: see text] memristor and second-order [Formula: see text] memristor.
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