Abstract
The impact of Self-Heating Effect (SHE) on lateral Gate-All-Around (GAA) Nanosheet FET (NSFET) is numerically investigated by comparison of single and multi-channel NSFET with a single-channel FinFET. TCAD results show a 1.8% degradation in ON-current $(\mathrm {{I} _{ON}})_{\, }$for a NSFET in comparison to 2.4% for a FinFET with identical footprint and similar OFF-current $( \mathrm {{I}_{OFF}})_{}$ values. Furthermore, by investigating the effect of geometry scaling on SHE, we conclude that NSFET exhibits better resilience to SHE in comparison to the FinFET.
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