Abstract
A method of studying order in the structure of disordered materials using a calculation of the average mutual information is suggested. The algorithm of calculation of the average mutual information on an undirected vector between the points of the material surface adapted to the study of disordered semiconductors is described. Using models of the surfaces with different degrees of order, complex testing of the method is performed. Samples of amorphous silicon compounds obtained under different technological conditions are experimentally investigated.
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