Study of Self-Heating and High-Power Microwave Effects for Enhancement-Mode p-Gate GaN HEMT.

Yingshuo Qin,Fuxing Li,Changchun Chai,Han Wu,Yintang Yang,Qishuai Liang

doi:10.3390/mi13010106

Abstract

The self-heating and high-power microwave (HPM) effects that can cause device heating are serious reliability issues for gallium nitride (GaN) high-electron-mobility transistors (HEMT), but the specific mechanisms are disparate. The different impacts of the two effects on enhancement-mode p-gate AlGaN/GaN HEMT are first investigated in this paper by simulation and experimental verification. The simulation models are calibrated with previously reported work in electrical characteristics. By simulation, the distributions of lattice temperature, energy band, current density, electric field strength, and carrier mobility within the device are plotted to facilitate understanding of the two distinguishing mechanisms. The results show that the upward trend in temperature, the distribution of hot spots, and the thermal mechanism are the main distinctions. The effect of HPM leads to breakdown and unrecoverable thermal damage in the source and drain areas below the gate, while self-heating can only cause heat accumulation in the drain area. This is an important reference for future research on HEMT damage location prediction technology and reliability enhancement.

Highlights

After decades of evolution of semiconductor process technology, the semiconductor process has already entered the nano era, and the heat accumulation problem worsened by higher integration has become more and more serious
Zhou et al applied high-power microwave (HPM) pulses to the gallium nitride (GaN) high-electron-mobility transistors (HEMT) to study the damage of thermal stress to the device, and the results showed that the field plate near the gate is a vulnerable area [23]
The electric field induced by the spontaneous and piezoelectric polarization can result in an increase in the carrier concentration at the AlGaN/GaN heterointerface [28]

Summary

Introduction

After decades of evolution of semiconductor process technology, the semiconductor process has already entered the nano era, and the heat accumulation problem worsened by higher integration has become more and more serious. High-power microwaves, as a kind of strong electromagnetic pulse (EMP), can be coupled into the electronic system through antennas, sensors, and gaps in the system package shell, etc., causing the electronic system to generate large noise signals and malfunctioning At worst, it can result in equipment failure and unrecoverable thermal damage [12]. L. Zhou et al applied HPM pulses to the GaN HEMT to study the damage of thermal stress to the device, and the results showed that the field plate near the gate is a vulnerable area [23]. Zhou et al applied HPM pulses to the GaN HEMT to study the damage of thermal stress to the device, and the results showed that the field plate near the gate is a vulnerable area [23] These two thermal effects have different mechanisms and effects on semiconductor devices, which were not mentioned in the previously reported work.

Device Structure and Simulation Model

Electrical Characteristics

Self-Heating Effect

Thermal Characteristics

HPM Effect

Conclusions