Abstract
Schottky barrier diodes were prepared by vacuum evaporation of Ni onto a surface of Mn doped p-type InP. They were studied by temperature dependent current–voltage and capacitance–voltage measurements and by temperature dependent admittance spectroscopy. Current–voltage characteristics were fitted by considering thermionic emission, serial resistance of bulk InP and nonlinear serial resistance of the back contact of the Schottky diode. Schottky barrier height calculated from current–voltage characteristics was lower than the one calculated from capacitance–voltage characteristics, which was prescribed to a strong density of surface states. Activation energy derived from admittance spectra, 0.15 eV is much smaller than the binding energy derived from temperature dependent Hall measurements, 0.22 eV for unknown reason.
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