Study of resonant tunneling in Au nanoclusters on the surface of SiO2/Si thin films using the combined scanning tunneling microscopy and atomic-force microscopy technique

Abstract

The morphology and electronic properties of Au nanoclusters on the surface of SiO2 thin films on n+-Si substrates are studied using the combined scanning tunneling microscopy (STM) and atomic-force microscopy (AFM) technique. The peaks associated with the resonant tunneling of electrons from the states of the valence band of the probe material to the states of the conduction band of the substrate material through Au nanoclusters are observed on the current-voltage characteristics for the contact of a p+-Si AFM probe with Au nanoclusters. Experimental results are interpreted by calculating the tunnel transparency of the SiO2/Au/SiO2 double barrier structure in a strong electric field.