Study of resonant transport in InAs-based quantum hot electron transistors

H. Nguyen Van,A. N. Baranov,M. Zaknoune,R. Teissier

doi:10.1063/5.0011780

Abstract

A study of transport in a quantum hot electron transistor made of an InAs/AlSb heterostructure is reported. It exhibited that the quantum hot electron transistors with a thick emitter efficiently prevented the parasitic base currents compared with transistors with a thin emitter. The static characteristics of the fabricated devices demonstrated an enhancement of the current gain of 9 and a collector breakdown voltage of 1.5 V with thick-emitter designed transistors. In optimized devices, the current is dominated by fast resonant tunneling that is promising for their future development of as high frequency transistors.

Highlights

Very high frequency electronic devices are essential for high speed telecommunications or sub-mm wave generation and detection systems
InAs has already been proposed as a good material for bipolar transistors,4,5 but its use in heterojunction bipolar transistors (HBTs) was hampered by the lack of a large bandgap material, a lattice matched on the InAs substrate, that could provide the large valence band offset required for npn HBTs
When compared to quantum cascade laser (QCL), the major difference in the band structure is the position of the extraction miniband that is resonant with the upper state of the active quantum well (QW) instead of the lower state in a QCL

Summary

INTRODUCTION

Scitation.org/journal/adv transport of these devices are still unexploited, which is a necessary factor to continuously optimize the transistor structures as well as gain the dynamic performance. In this Letter, we study the physics of transport in an original high speed vertical transport transistor based on InAs. To evaluate the physics of transport of InAs-based QHET, two QHET structures with different emitter designs have been fabricated and studied at cryogenic temperatures and room temperature. To evaluate the physics of transport of InAs-based QHET, two QHET structures with different emitter designs have been fabricated and studied at cryogenic temperatures and room temperature It demonstrated that the emitter with a thick barrier is sufficient to prevent the leakage currents from the emitters, which efficiently enhanced the gain statics

Design of QHET structures

Fabrication of QHET

RESULTS AND DISCUSSION

CONCLUSIONS