Abstract
Thermal annealing effect and high temperature electrical measurement were studied on a temperature-sensitive FeOx-transition layer of a TiN/SiO2/FeOx/Fe structure, including bipolar switching behaviors, statistics of set and reset electrical characteristics, endurance and retention. Increase of the thermal budget on the structure shrinks both the operation voltage and variation as well as improving the device operation stability and power dissipation. Cross-sectional image, crystallinity and chemical composition analyzes of the FeOx-transition layer were examined by transmission electron microscope, X-ray diffraction and X-ray photon-emission spectra depth profiles, respectively. In addition, for the temperature-sensitive FeOx-containing structure, the resistive switching behaviors and characteristics were also investigated at room temperature and 85°C. These resistive switching behaviors indicate the possible resistive switching mechanism and electrical characteristics, providing a better understanding for the temperature-sensitive FeOx-based memristors.
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