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Abstract
Experimental program and preparation technology of highly densified reaction bonded silicon carbide resistance materials with different resistivity were investigated by using alumina or silicon nitride as aids for improving of the volume resistivity. The microstructure of the materials was observed by scanning electron microscope. According to the experimental results, the resistivity of the material could be controlled by the particle size and the content of the aids. Besides, alumina could reduce silicon penetration and increase resistivity greatly, and 10wt.% of alumina could satisfy the requirement of resistance. In addition, different particle size of matrix materials had a great impact on the resistivity. Compared with the coarse silicon carbide, the room temperature resistivity value by using the fine silicon carbide could increases for six times.
Published Version
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